RQJ0303PGDQA#H6 - MOSFET P-CH 30V 3.3A 3MPAK

Fabricant Nimewo Pati

RQJ0303PGDQA#H6

Entèn Nimewo Pati

AX-RQJ0303PGDQA#H6

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET P-CH 30V 3.3A 3MPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

19864 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RQJ0303PGDQA#H6 nan stock pou vann.

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Espesifikasyon pou RQJ0303PGDQA#H6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RQJ0303PGDQA#H6

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET P-CH 30V 3.3A 3MPAK

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 68 mOhm @ 1.6A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : +10V, -20V

Antre kapasite (Ciss) (Max) @ Vds : 625pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 800mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 3-MPAK

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RQJ03 , RQJ0303

dokiman pou RQJ0303PGDQA#H6

Fich : RQJ0303PGDQA#H6.pdf

pwodwi ki gen rapò pou RQJ0303PGDQA#H6 Renesas Electronics America

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