RQJ0303PGDQA#H6 Mode
Espesifikasyon pou RQJ0303PGDQA#H6
Nimewo pati : RQJ0303PGDQA#H6
Fabricant : Renesas Electronics America
Deskripsyon : MOSFET P-CH 30V 3.3A 3MPAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 68 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : +10V, -20V
Antre kapasite (Ciss) (Max) @ Vds : 625pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 3-MPAK
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 30V 3.3A 3MPAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
19864 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen RQJ0303PGDQA#H6 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou RQJ0303PGDQA#H6 Renesas Electronics America
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