SP8M4FU6TB - MOSFET N/P-CH 30V 9A/7A 8SOIC

Fabricant Nimewo Pati

SP8M4FU6TB

Entèn Nimewo Pati

AX-SP8M4FU6TB

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N/P-CH 30V 9A/7A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou SP8M4FU6TB

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SP8M4FU6TB

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N/P-CH 30V 9A/7A 8SOIC

Seri : -

Estati Pati : Obsolete

FET Kalite : N and P-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A, 7A

RD sou (Max) @ Id, Vgs : 18 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 1190pF @ 10V

Pouvwa - Max : 2W

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SP8 , SP8M4

dokiman pou SP8M4FU6TB

Fich : SP8M4FU6TB.pdf

pwodwi ki gen rapò pou SP8M4FU6TB Rohm Semiconductor

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