SP8M4FU6TB Mode
Espesifikasyon pou SP8M4FU6TB
Nimewo pati : SP8M4FU6TB
Fabricant : Rohm Semiconductor
Deskripsyon : MOSFET N/P-CH 30V 9A/7A 8SOIC
Seri : -
Estati Pati : Obsolete
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A, 7A
RD sou (Max) @ Id, Vgs : 18 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 1190pF @ 10V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-SP8M4FU6TB
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 30V 9A/7A 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
28273 moso
referans pri
pri nou
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pwodwi ki gen rapò pou SP8M4FU6TB Rohm Semiconductor
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|---|---|---|---|
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