RW1E025RPT2CR - MOSFET P-CH 30V 2.5A WEMT6

Fabricant Nimewo Pati

RW1E025RPT2CR

Entèn Nimewo Pati

AX-RW1E025RPT2CR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET P-CH 30V 2.5A WEMT6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6041430 Pieces

referans pri

~~USD 0.04644~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou RW1E025RPT2CR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RW1E025RPT2CR

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET P-CH 30V 2.5A WEMT6

Seri : -

Estati Pati : Not For New Designs

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 75 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 5.2nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 480pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WEMT

Pake / Ka : SOT-563, SOT-666

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RW1E , RW1E02

dokiman pou RW1E025RPT2CR

Fich : RW1E025RPT2CR.pdf

pwodwi ki gen rapò pou RW1E025RPT2CR Rohm Semiconductor

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