RW1E025RPT2CR Mode
Espesifikasyon pou RW1E025RPT2CR
Nimewo pati : RW1E025RPT2CR
Fabricant : Rohm Semiconductor
Deskripsyon : MOSFET P-CH 30V 2.5A WEMT6
Seri : -
Estati Pati : Not For New Designs
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 75 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 5.2nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 480pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-WEMT
Pake / Ka : SOT-563, SOT-666
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 30V 2.5A WEMT6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
6041430 moso
referans pri
pri nou
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pwodwi ki gen rapò pou RW1E025RPT2CR Rohm Semiconductor
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