GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7

Fabricant Nimewo Pati

GA10SICP12-263

Entèn Nimewo Pati

AX-GA10SICP12-263

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

TRANS SJT 1200V 25A TO263-7

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

23443 Pieces

referans pri

~~USD 16.75044~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GA10SICP12-263 nan stock pou vann.

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Espesifikasyon pou GA10SICP12-263

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GA10SICP12-263

Fabricant : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 25A TO263-7

Seri : -

Estati Pati : Active

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 1403pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 170W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK (7-Lead)

Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GA10 , GA10SIC

dokiman pou GA10SICP12-263

Fich : GA10SICP12-263.pdf

pwodwi ki gen rapò pou GA10SICP12-263 GeneSiC Semiconductor

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