GA10SICP12-263 Mode
Espesifikasyon pou GA10SICP12-263
Nimewo pati : GA10SICP12-263
Fabricant : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1200V 25A TO263-7
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 100 mOhm @ 10A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 1403pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 170W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK (7-Lead)
Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
TRANS SJT 1200V 25A TO263-7
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
23443 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou GA10SICP12-263 GeneSiC Semiconductor
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
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| Intel | IC CPLD 64MC 4.5NS 100FBGA | ||
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| Xilinx Inc. | IC CPLD 512MC 9NS 324BGA | ||
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