NTHD4P02FT1G - MOSFET P-CH 20V 2.2A CHIPFET
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-NTHD4P02FT1G
Fabricant
Kout Deskripsyon
MOSFET P-CH 20V 2.2A CHIPFET
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2544105 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen NTHD4P02FT1G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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- Paypal (Credit Card)
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Espesifikasyon pou NTHD4P02FT1G
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
NTHD4P02FT1G
Fabricant :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 2.2A CHIPFET
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.2A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.1W (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ChipFET™
Pake / Ka :
8-SMD, Flat Lead
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou NTHD4P02FT1G
Fich :
NTHD4P02FT1G.pdf
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