IX2120B - 1200V HIGH AND LOW SIDE GATE DRI

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
1200V HIGH AND LOW SIDE GATE DRI
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
182420 Pieces
referans pri
USD 1.71
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IX2120B nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou IX2120B

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IX2120B
Fabricant : IXYS Integrated Circuits Division
Deskripsyon : 1200V HIGH AND LOW SIDE GATE DRI
Seri : -
Estati Pati : Active
Kondwi konte genyen : Half-Bridge
Kalite Chèn : Independent
Kantite Chofè yo : 2
Kalite Gate : IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou : 15V ~ 20V
Vòltaj lojik - VIL, VIH : 6V, 9.5V
Kouran - Peak Sòti (Sous, Lavabo) : 2A, 2A
Kalite Antre : Non-Inverting
Segondè Voltage Side - Max (Bootstrap) : 1200V
Rise / Fall Time (Tip) : 9.4ns, 9.7ns
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 28-SOIC (0.295", 7.50mm Width)
Pake Aparèy Founisè : 28-SOIC
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IX , IX2

dokiman pou IX2120B

Fich : IX2120B.pdf

pwodwi ki gen rapò pou IX2120B IXYS Integrated Circuits Division

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