SI1025X-T1-GE3 - MOSFET 2P-CH 60V 0.19A SC-89
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2P-CH 60V 0.19A SC-89
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2355105 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI1025X-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SI1025X-T1-GE3
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI1025X-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 60V 0.19A SC-89
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190mA
RD sou (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 1.7nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds : 23pF @ 25V
Pouvwa - Max : 250mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : SC-89-6
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou SI1025X-T1-GE3
Fich : SI1025X-T1-GE3.pdf
pwodwi ki gen rapò pou SI1025X-T1-GE3 Vishay Siliconix
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