FDB12N50UTM_WS - MOSFET N-CH 500V 10A D2PAK

Fabricant Nimewo Pati

FDB12N50UTM_WS

Entèn Nimewo Pati

AX-FDB12N50UTM_WS

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 500V 10A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6616 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDB12N50UTM_WS nan stock pou vann.

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Espesifikasyon pou FDB12N50UTM_WS

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB12N50UTM_WS

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 500V 10A D2PAK

Seri : FRFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 800 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1395pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 165W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB1 , FDB12N5

dokiman pou FDB12N50UTM_WS

Fich : FDB12N50UTM_WS.pdf

pwodwi ki gen rapò pou FDB12N50UTM_WS ON Semiconductor

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