SIZF300DT-T1-GE3 - MOSFET DUAL N-CHAN 30V PPAIR 3X3

Fabricant Nimewo Pati

SIZF300DT-T1-GE3

Entèn Nimewo Pati

AX-SIZF300DT-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET DUAL N-CHAN 30V PPAIR 3X3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

831890 Pieces

referans pri

~~USD 0.33726~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIZF300DT-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIZF300DT-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIZF300DT-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET DUAL N-CHAN 30V PPAIR 3X3

Seri : TrenchFET® Gen IV

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)

RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 22nC @ 10V, 62nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 15V, 3150pF @ 15V

Pouvwa - Max : 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerWDFN

Pake Aparèy Founisè : 8-PowerPair® (6x5)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIZF3 , SIZF300D

dokiman pou SIZF300DT-T1-GE3

Fich : SIZF300DT-T1-GE3.pdf

pwodwi ki gen rapò pou SIZF300DT-T1-GE3 Vishay Siliconix

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