RGT80TS65DGC11 - IGBT 650V 70A 234W TO-247N

Fabricant Nimewo Pati

RGT80TS65DGC11

Entèn Nimewo Pati

AX-RGT80TS65DGC11

Fabricant

Rohm Semiconductor

Kout Deskripsyon

IGBT 650V 70A 234W TO-247N

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

114320 Pieces

referans pri

~~USD 2.454~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RGT80TS65DGC11 nan stock pou vann.

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Espesifikasyon pou RGT80TS65DGC11

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RGT80TS65DGC11

Fabricant : Rohm Semiconductor

Deskripsyon : IGBT 650V 70A 234W TO-247N

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Voltage - Pèseptè ki emèt deba (Max) : 650V

Kouran - Pèseptè (Ic) (Max) : 70A

Kouran - Pèseptè batman (Icm) : 120A

Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 40A

Pouvwa - Max : 234W

Oblije chanje enèji : -

Kalite Antre : Standard

Gate chaje : 79nC

Td (on / off) @ 25 ° C : 34ns/119ns

Kondisyon egzamen an : 400V, 40A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : 58ns

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-247-3

Pake Aparèy Founisè : TO-247N

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RGT8 , RGT80TS

dokiman pou RGT80TS65DGC11

Fich : RGT80TS65DGC11.pdf

pwodwi ki gen rapò pou RGT80TS65DGC11 Rohm Semiconductor

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