UG06BHA0G - DIODE GEN PURP 100V 600MA TS-1

Fabricant Nimewo Pati

UG06BHA0G

Entèn Nimewo Pati

AX-UG06BHA0G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 100V 600MA TS-1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4299830 Pieces

referans pri

~~USD 0.06525~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen UG06BHA0G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou UG06BHA0G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : UG06BHA0G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 100V 600MA TS-1

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 600mA

Voltage - Forward (Vf) (Max) @ Si : 950mV @ 600mA

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 15ns

Kouran - Fèy Reverse @ Vr : 5µA @ 100V

Kapasite @ Vr, F : 9pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : T-18, Axial

Pake Aparèy Founisè : TS-1

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UG0 , UG06

dokiman pou UG06BHA0G

Fich : UG06BHA0G.pdf

pwodwi ki gen rapò pou UG06BHA0G Taiwan Semiconductor Corporation

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