BSC0921NDIATMA1 - MOSFET 2N-CH 30V 17A/31A TISON8

Fabricant Nimewo Pati

BSC0921NDIATMA1

Entèn Nimewo Pati

AX-BSC0921NDIATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 30V 17A/31A TISON8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

665870 Pieces

referans pri

~~USD 0.421344~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSC0921NDIATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSC0921NDIATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSC0921NDIATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 30V 17A/31A TISON8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Asymmetrical

Karakteristik FET : Logic Level Gate, 4.5V Drive

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A, 31A

RD sou (Max) @ Id, Vgs : 5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.9nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1025pF @ 15V

Pouvwa - Max : 1W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerTDFN

Pake Aparèy Founisè : PG-TISON-8

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSC09 , BSC0921

dokiman pou BSC0921NDIATMA1

Fich : BSC0921NDIATMA1.pdf

pwodwi ki gen rapò pou BSC0921NDIATMA1 Infineon Technologies

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