DF23MR12W1M1B11BOMA1 - MOSFET MODULE 1200V 25A
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET MODULE 1200V 25A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
7984 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen DF23MR12W1M1B11BOMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou DF23MR12W1M1B11BOMA1
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
DF23MR12W1M1B11BOMA1
Fabricant :
Infineon Technologies
Deskripsyon :
MOSFET MODULE 1200V 25A
Seri :
CoolSiC™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A
RD sou (Max) @ Id, Vgs :
45 mOhm @ 25A, 15V
Vgs (th) (Max) @ Id :
5.5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
620nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
2000pF @ 800V
Pouvwa - Max :
20mW
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
Pwa :
-
kondisyon :
Nouvo ak orijinal
Lyen ki gen rapò :
DF23MR , DF23MR12W1
dokiman pou DF23MR12W1M1B11BOMA1
Fich :
DF23MR12W1M1B11BOMA1.pdf
pwodwi ki gen rapò pou DF23MR12W1M1B11BOMA1 Infineon Technologies
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