BSZ15DC02KDHXTMA1 - MOSFET N/P-CH 20V 8TDSON

Fabricant Nimewo Pati

BSZ15DC02KDHXTMA1

Entèn Nimewo Pati

AX-BSZ15DC02KDHXTMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N/P-CH 20V 8TDSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1065400 Pieces

referans pri

~~USD 0.26334~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSZ15DC02KDHXTMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSZ15DC02KDHXTMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSZ15DC02KDHXTMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N/P-CH 20V 8TDSON

Seri : Automotive, AEC-Q101, HEXFET®

Estati Pati : Active

FET Kalite : N and P-Channel Complementary

Karakteristik FET : Logic Level Gate, 2.5V Drive

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.1A, 3.2A

RD sou (Max) @ Id, Vgs : 55 mOhm @ 5.1A, 4.5V

Vgs (th) (Max) @ Id : 1.4V @ 110µA

Chaje Gate (Qg) (Max) @ Vgs : 2.8nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 419pF @ 10V

Pouvwa - Max : 2.5W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerTDFN

Pake Aparèy Founisè : PG-TSDSON-8-FL

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSZ15 , BSZ15DC0

dokiman pou BSZ15DC02KDHXTMA1

Fich : BSZ15DC02KDHXTMA1.pdf

pwodwi ki gen rapò pou BSZ15DC02KDHXTMA1 Infineon Technologies

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