BSZ15DC02KDHXTMA1 - MOSFET N/P-CH 20V 8TDSON
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 20V 8TDSON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1065400 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen BSZ15DC02KDHXTMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou BSZ15DC02KDHXTMA1
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
BSZ15DC02KDHXTMA1
Fabricant :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 20V 8TDSON
Seri :
Automotive, AEC-Q101, HEXFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel Complementary
Karakteristik FET :
Logic Level Gate, 2.5V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.1A, 3.2A
RD sou (Max) @ Id, Vgs :
55 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs :
2.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
419pF @ 10V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerTDFN
Pake Aparèy Founisè :
PG-TSDSON-8-FL
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou BSZ15DC02KDHXTMA1
Fich :
BSZ15DC02KDHXTMA1.pdf
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