K4F8E3S4HB-MHCJ - 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Fabricant Nimewo Pati

Entèn Nimewo Pati

Fabricant

Kout Deskripsyon

8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

83735 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen K4F8E3S4HB-MHCJ nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : K4F8E3S4HB-MHCJ

Fabricant : Samsung Semiconductor

Deskripsyon : 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Seri : DDR3

dansite : 8 Gb

Org. : x32

vitès : 3733 Mbps

Voltage : 1.8 / 1.1 / 1.1 V

Tanperatur. : -40 ~ 105 °C

Pake : 200FBGA

pwodwi dènye nouvèl : Mass Production

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : K4F8E , K4F8E3S

Fich : K4F8E3S4HB-MHCJ.pdf

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