DMN2014LHAB-7 - MOSFET 2N-CH 20V 9A 6-UDFN

Fabricant Nimewo Pati

DMN2014LHAB-7

Entèn Nimewo Pati

AX-DMN2014LHAB-7

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET 2N-CH 20V 9A 6-UDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2187735 Pieces

referans pri

~~USD 0.128244~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMN2014LHAB-7 nan stock pou vann.

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Espesifikasyon pou DMN2014LHAB-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMN2014LHAB-7

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET 2N-CH 20V 9A 6-UDFN

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A

RD sou (Max) @ Id, Vgs : 13 mOhm @ 4A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1550pF @ 10V

Pouvwa - Max : 800mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-UFDFN Exposed Pad

Pake Aparèy Founisè : U-DFN2030-6 (Type B)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMN2 , DMN201

dokiman pou DMN2014LHAB-7

Fich : DMN2014LHAB-7.pdf

pwodwi ki gen rapò pou DMN2014LHAB-7 Diodes Incorporated

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