FDB070AN06A0 - MOSFET N-CH 60V 80A TO-263AB

Fabricant Nimewo Pati

FDB070AN06A0

Entèn Nimewo Pati

AX-FDB070AN06A0

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 80A TO-263AB

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Plon gratis / RoHS Konfòm

akouchman Tan

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378880 Pieces

referans pri

~~USD 0.74049~~

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AXE Semiconductor gen FDB070AN06A0 nan stock pou vann.

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Espesifikasyon pou FDB070AN06A0

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB070AN06A0

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 80A TO-263AB

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Ta), 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 7 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 66nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 175W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB0 , FDB070

dokiman pou FDB070AN06A0

Fich : FDB070AN06A0.pdf

pwodwi ki gen rapò pou FDB070AN06A0 ON Semiconductor

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