S4PJHM3_A/H - DIODE GEN PURP 600V 4A TO277A

Fabricant Nimewo Pati

S4PJHM3_A/H

Entèn Nimewo Pati

AX-S4PJHM3_A/H

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 600V 4A TO277A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2019025 Pieces

referans pri

~~USD 0.13896~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen S4PJHM3_A/H nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou S4PJHM3_A/H

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : S4PJHM3_A/H

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 600V 4A TO277A

Seri : Automotive, AEC-Q101, eSMP®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 4A

Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 4A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 2.5µs

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : 30pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-277, 3-PowerDFN

Pake Aparèy Founisè : TO-277A (SMPC)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : S4P , S4PJH

dokiman pou S4PJHM3_A/H

Fich : S4PJHM3_A/H.pdf

pwodwi ki gen rapò pou S4PJHM3_A/H Vishay Semiconductor Diodes Division

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