FQI4N80TU - MOSFET N-CH 800V 3.9A I2PAK

Fabricant Nimewo Pati

FQI4N80TU

Entèn Nimewo Pati

AX-FQI4N80TU

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 3.9A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

439005 Pieces

referans pri

~~USD 0.639084~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQI4N80TU nan stock pou vann.

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Espesifikasyon pou FQI4N80TU

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQI4N80TU

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 3.9A I2PAK

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.6 Ohm @ 1.95A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 880pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 130W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQI , FQI4

dokiman pou FQI4N80TU

Fich : FQI4N80TU.pdf

pwodwi ki gen rapò pou FQI4N80TU ON Semiconductor

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