HTNFET-D - MOSFET N-CH 55V 8-DIP

Fabricant Nimewo Pati

HTNFET-D

Entèn Nimewo Pati

AX-HTNFET-D

Fabricant

Honeywell Aerospace

Kout Deskripsyon

MOSFET N-CH 55V 8-DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9150 Pieces

referans pri

~~USD 243.6~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HTNFET-D nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HTNFET-D

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HTNFET-D

Fabricant : Honeywell Aerospace

Deskripsyon : MOSFET N-CH 55V 8-DIP

Seri : HTMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 400 mOhm @ 100mA, 5V

Vgs (th) (Max) @ Id : 2.4V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 4.3nC @ 5V

Vgs (Max) : 10V

Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 28V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 50W (Tj)

Operating Tanperati : -55°C ~ 225°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 8-CDIP-EP

Pake / Ka : 8-CDIP Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HT , HTNF

dokiman pou HTNFET-D

Fich : HTNFET-D.pdf

pwodwi ki gen rapò pou HTNFET-D Honeywell Aerospace

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