1N6483HE3/97 - DIODE GEN PURP 800V 1A DO213AB

Fabricant Nimewo Pati

1N6483HE3/97

Entèn Nimewo Pati

AX-1N6483HE3/97

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 800V 1A DO213AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3523250 Pieces

referans pri

~~USD 0.079632~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N6483HE3/97 nan stock pou vann.

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Espesifikasyon pou 1N6483HE3/97

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 1N6483HE3/97

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 800V 1A DO213AB

Seri : SUPERECTIFIER®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 800V

Kapasite @ Vr, F : 8pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-213AB, MELF (Glass)

Pake Aparèy Founisè : DO-213AB

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 1N64 , 1N6483

dokiman pou 1N6483HE3/97

Fich : 1N6483HE3/97.pdf

pwodwi ki gen rapò pou 1N6483HE3/97 Vishay Semiconductor Diodes Division

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