IRLR3110ZTRRPBF - MOSFET N-CH 100V 42A DPAK

Fabricant Nimewo Pati

IRLR3110ZTRRPBF

Entèn Nimewo Pati

AX-IRLR3110ZTRRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 42A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

578755 Pieces

referans pri

~~USD 0.48477~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLR3110ZTRRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRLR3110ZTRRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRLR3110ZTRRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 42A DPAK

Seri : HEXFET®

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 42A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 14 mOhm @ 38A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 3980pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 140W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRLR3 , IRLR311

dokiman pou IRLR3110ZTRRPBF

Fich : IRLR3110ZTRRPBF.pdf

pwodwi ki gen rapò pou IRLR3110ZTRRPBF Infineon Technologies

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