FQPF10N60CT - MOSFET N-CH 600V 9.5A TO-220F

Fabricant Nimewo Pati

FQPF10N60CT

Entèn Nimewo Pati

AX-FQPF10N60CT

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 9.5A TO-220F

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou FQPF10N60CT

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQPF10N60CT

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 9.5A TO-220F

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 730 mOhm @ 4.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 57nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2040pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 50W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQP , FQPF1

dokiman pou FQPF10N60CT

Fich : FQPF10N60CT.pdf

pwodwi ki gen rapò pou FQPF10N60CT ON Semiconductor

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