LND01K1-G - MOSFET N-CH 9V 330MA SOT23-5

Fabricant Nimewo Pati

LND01K1-G

Entèn Nimewo Pati

AX-LND01K1-G

Fabricant

Microchip Technology

Kout Deskripsyon

MOSFET N-CH 9V 330MA SOT23-5

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1409895 Pieces

referans pri

~~USD 0.198996~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen LND01K1-G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou LND01K1-G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : LND01K1-G

Fabricant : Microchip Technology

Deskripsyon : MOSFET N-CH 9V 330MA SOT23-5

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 9V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 330mA (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 0V

RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 100mA, 0V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : +0.6V, -12V

Antre kapasite (Ciss) (Max) @ Vds : 46pF @ 5V

Karakteristik FET : Depletion Mode

Disipasyon Pouvwa (Max) : 360mW (Ta)

Operating Tanperati : -25°C ~ 125°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-5

Pake / Ka : SC-74A, SOT-753

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : LND , LND0

dokiman pou LND01K1-G

Fich : LND01K1-G.pdf

pwodwi ki gen rapò pou LND01K1-G Microchip Technology

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