SI5920DC-T1-GE3 - MOSFET 2N-CH 8V 4A 1206-8

Fabricant Nimewo Pati

SI5920DC-T1-GE3

Entèn Nimewo Pati

AX-SI5920DC-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 8V 4A 1206-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27650 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI5920DC-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI5920DC-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI5920DC-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 8V 4A 1206-8

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 8V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A

RD sou (Max) @ Id, Vgs : 32 mOhm @ 6.8A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 680pF @ 4V

Pouvwa - Max : 3.12W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SMD, Flat Lead

Pake Aparèy Founisè : 1206-8 ChipFET™

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI592 , SI5920D

dokiman pou SI5920DC-T1-GE3

Fich : SI5920DC-T1-GE3.pdf

pwodwi ki gen rapò pou SI5920DC-T1-GE3 Vishay Siliconix

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