TPS1101DR - MOSFET P-CH 15V 2.3A 8-SOIC

Fabricant Nimewo Pati

TPS1101DR

Entèn Nimewo Pati

AX-TPS1101DR

Fabricant

Texas Instruments

Kout Deskripsyon

MOSFET P-CH 15V 2.3A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

481965 Pieces

referans pri

~~USD 0.58212~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPS1101DR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPS1101DR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPS1101DR

Fabricant : Texas Instruments

Deskripsyon : MOSFET P-CH 15V 2.3A 8-SOIC

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 15V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 10V

RD sou (Max) @ Id, Vgs : 90 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11.25nC @ 10V

Vgs (Max) : +2V, -15V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 791mW (Ta)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOIC

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPS , TPS1

dokiman pou TPS1101DR

Fich : TPS1101DR.pdf

pwodwi ki gen rapò pou TPS1101DR Texas Instruments

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