FDB86135 - MOSFET N-CH 100V D2PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V D2PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
118080 Pieces
referans pri
USD 2.376
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDB86135 nan stock pou vann.
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Espesifikasyon pou FDB86135

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FDB86135
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V D2PAK
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.5 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 116nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7295pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.4W (Ta), 227W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FD , FDB8

dokiman pou FDB86135

Fich : FDB86135.pdf

pwodwi ki gen rapò pou FDB86135 ON Semiconductor

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