FQI6N60CTU - MOSFET N-CH 600V 5.5A I2PAK

Fabricant Nimewo Pati

FQI6N60CTU

Entèn Nimewo Pati

AX-FQI6N60CTU

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 5.5A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70335 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQI6N60CTU nan stock pou vann.

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Espesifikasyon pou FQI6N60CTU

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQI6N60CTU

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 5.5A I2PAK

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2 Ohm @ 2.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 810pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQI , FQI6N

dokiman pou FQI6N60CTU

Fich : FQI6N60CTU.pdf

pwodwi ki gen rapò pou FQI6N60CTU ON Semiconductor

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