AS4C512M16D3L-12BIN - IC DRAM 8G PARALLEL 96FBGA

Fabricant Nimewo Pati

AS4C512M16D3L-12BIN

Entèn Nimewo Pati

AX-AS4C512M16D3L-12BIN

Fabricant

Alliance Memory, Inc.

Kout Deskripsyon

IC DRAM 8G PARALLEL 96FBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

24745 Pieces

referans pri

~~USD 17.64~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AS4C512M16D3L-12BIN nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou AS4C512M16D3L-12BIN

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : AS4C512M16D3L-12BIN

Fabricant : Alliance Memory, Inc.

Deskripsyon : IC DRAM 8G PARALLEL 96FBGA

Seri : -

Estati Pati : Active

Kalite memwa yo : Volatile

Fòma memwa : DRAM

Teknoloji : SDRAM - DDR3L

Size memwa : 8Gb (512M x 16)

Frè frekans lan : 800MHz

Ekri Sik Tan - Pawòl, Page : 15ns

Tan aksè : 13.75ns

Entèfas memwa : Parallel

Voltage - Pwovizyon pou : 1.283V ~ 1.45V

Operating Tanperati : -40°C ~ 95°C (TC)

Mounting Kalite : Surface Mount

Pake / Ka : 96-TFBGA

Pake Aparèy Founisè : 96-FBGA (14x9)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : AS4C51 , AS4C512M1

dokiman pou AS4C512M16D3L-12BIN

Fich : AS4C512M16D3L-12BIN.pdf

pwodwi ki gen rapò pou AS4C512M16D3L-12BIN Alliance Memory, Inc.

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PEF220WP60236BK1	Vishay Beyschlag	CAP CER 6000PF 20KV R230 DISK.