AS4C16M16MSA-6BIN - IC DRAM 256M PARALLEL 54FBGA

Fabricant Nimewo Pati

AS4C16M16MSA-6BIN

Entèn Nimewo Pati

AX-AS4C16M16MSA-6BIN

Fabricant

Alliance Memory, Inc.

Kout Deskripsyon

IC DRAM 256M PARALLEL 54FBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

88870 Pieces

referans pri

~~USD 3.51~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AS4C16M16MSA-6BIN nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou AS4C16M16MSA-6BIN

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : AS4C16M16MSA-6BIN

Fabricant : Alliance Memory, Inc.

Deskripsyon : IC DRAM 256M PARALLEL 54FBGA

Seri : -

Estati Pati : Active

Kalite memwa yo : Volatile

Fòma memwa : DRAM

Teknoloji : SDRAM - Mobile SDRAM

Size memwa : 256Mb (16M x 16)

Frè frekans lan : 166MHz

Ekri Sik Tan - Pawòl, Page : -

Tan aksè : 5.5ns

Entèfas memwa : Parallel

Voltage - Pwovizyon pou : 1.7V ~ 1.95V

Operating Tanperati : -40°C ~ 85°C (TA)

Mounting Kalite : Surface Mount

Pake / Ka : 54-VFBGA

Pake Aparèy Founisè : 54-FBGA (8x8)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : AS4C1 , AS4C16M1

dokiman pou AS4C16M16MSA-6BIN

Fich : AS4C16M16MSA-6BIN.pdf

pwodwi ki gen rapò pou AS4C16M16MSA-6BIN Alliance Memory, Inc.

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