FDB3632-F085 - MOSFET N-CH 100V 12A D2PAK

Fabricant Nimewo Pati

FDB3632-F085

Entèn Nimewo Pati

AX-FDB3632-F085

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 12A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

202120 Pieces

referans pri

~~USD 1.388076~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDB3632-F085 nan stock pou vann.

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Espesifikasyon pou FDB3632-F085

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB3632-F085

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 12A D2PAK

Seri : Automotive, AEC-Q101, PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 310W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263AB

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB3 , FDB363

dokiman pou FDB3632-F085

Fich : FDB3632-F085.pdf

pwodwi ki gen rapò pou FDB3632-F085 ON Semiconductor

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