FDP045N10A - MOSFET N-CH 100V 120A TO-220-3

Fabricant Nimewo Pati

FDP045N10A

Entèn Nimewo Pati

AX-FDP045N10A

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 120A TO-220-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15568 Pieces

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pri nou

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Espesifikasyon pou FDP045N10A

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDP045N10A

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 120A TO-220-3

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5270pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 263W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDP , FDP04

dokiman pou FDP045N10A

Fich : FDP045N10A.pdf

pwodwi ki gen rapò pou FDP045N10A ON Semiconductor

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