NSVB123JPDXV6T1G - TRANS PREBIAS NPN/PNP SOT563

Fabricant Nimewo Pati

NSVB123JPDXV6T1G

Entèn Nimewo Pati

AX-NSVB123JPDXV6T1G

Fabricant

ON Semiconductor

Kout Deskripsyon

TRANS PREBIAS NPN/PNP SOT563

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou NSVB123JPDXV6T1G

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NSVB123JPDXV6T1G

Fabricant : ON Semiconductor

Deskripsyon : TRANS PREBIAS NPN/PNP SOT563

Seri : -

Estati Pati : Obsolete

Kalite tranzistò : 1 NPN, 1 PNP - Pre-Biased (Dual)

Kouran - Pèseptè (Ic) (Max) : 100mA

Voltage - Pèseptè ki emèt deba (Max) : 50V

Rezistans - Sèvi (R1) : 2.2 kOhms

Rezistans - Sèvi ak emeteur (R2) : 4.7 kOhms

DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V

Vce saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA

Kouran - Cutoff Pèseptè (Max) : 500nA

Frekans - Tranzisyon : -

Pouvwa - Max : 500mW

Mounting Kalite : Surface Mount

Pake / Ka : SOT-563, SOT-666

Pake Aparèy Founisè : SOT-563

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NSVB1 , NSVB123J

dokiman pou NSVB123JPDXV6T1G

Fich : NSVB123JPDXV6T1G.pdf

pwodwi ki gen rapò pou NSVB123JPDXV6T1G ON Semiconductor

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