TK7P65W,RQ - MOSFET N-CH 650V 6.8A DPAK

Fabricant Nimewo Pati

TK7P65W,RQ

Entèn Nimewo Pati

AX-TK7P65W,RQ

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 650V 6.8A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

700215 Pieces

referans pri

~~USD 0.40068~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TK7P65W,RQ nan stock pou vann.

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Espesifikasyon pou TK7P65W,RQ

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK7P65W,RQ

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 650V 6.8A DPAK

Seri : DTMOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 800 mOhm @ 3.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 490pF @ 300V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 60W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK7 , TK7P6

dokiman pou TK7P65W,RQ

Fich : TK7P65W,RQ.pdf

pwodwi ki gen rapò pou TK7P65W,RQ Toshiba Semiconductor and Storage

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