BSD214SNH6327XTSA1 - MOSFET N-CH 20V 1.5A SOT363

Fabricant Nimewo Pati

BSD214SNH6327XTSA1

Entèn Nimewo Pati

AX-BSD214SNH6327XTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 20V 1.5A SOT363

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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5392140 Pieces

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~~USD 0.052032~~

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- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou BSD214SNH6327XTSA1

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Nimewo pati : BSD214SNH6327XTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 20V 1.5A SOT363

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 140 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 3.7µA

Chaje Gate (Qg) (Max) @ Vgs : 0.8nC @ 5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 143pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT363-6

Pake / Ka : 6-VSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSD214 , BSD214SNH

dokiman pou BSD214SNH6327XTSA1

Fich : BSD214SNH6327XTSA1.pdf

pwodwi ki gen rapò pou BSD214SNH6327XTSA1 Infineon Technologies

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