SQJ560EP-T1_GE3 - MOSFET DUAL N P CH 60V PPAK SO-8

Fabricant Nimewo Pati

SQJ560EP-T1_GE3

Entèn Nimewo Pati

AX-SQJ560EP-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET DUAL N P CH 60V PPAK SO-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

724955 Pieces

referans pri

~~USD 0.387006~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJ560EP-T1_GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SQJ560EP-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQJ560EP-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET DUAL N P CH 60V PPAK SO-8

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc), 18A (Tc)

RD sou (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V, 45nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1650pF @ 25V

Pouvwa - Max : 34W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SO-8 Dual

Pake Aparèy Founisè : PowerPAK® SO-8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQJ56 , SQJ560E

dokiman pou SQJ560EP-T1_GE3

Fich : SQJ560EP-T1_GE3.pdf

pwodwi ki gen rapò pou SQJ560EP-T1_GE3 Vishay Siliconix

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