BUK961R4-30E,118 - MOSFET N-CH 30V 120A D2PAK

Fabricant Nimewo Pati

BUK961R4-30E,118

Entèn Nimewo Pati

AX-BUK961R4-30E,118

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 30V 120A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15880 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BUK961R4-30E,118 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BUK961R4-30E,118

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BUK961R4-30E,118

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 30V 120A D2PAK

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 1.4 mOhm @ 25A, 5V

Vgs (th) (Max) @ Id : 2.1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 113nC @ 5V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : 16150pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 357W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BUK96 , BUK961R4

dokiman pou BUK961R4-30E,118

Fich : BUK961R4-30E,118.pdf

pwodwi ki gen rapò pou BUK961R4-30E,118 NXP USA Inc.

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