IXKC19N60C5 - MOSFET N-CH 600V 19A ISOPLUS220

Fabricant Nimewo Pati

IXKC19N60C5

Entèn Nimewo Pati

AX-IXKC19N60C5

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 600V 19A ISOPLUS220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

79470 Pieces

referans pri

~~USD 3.53016~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXKC19N60C5 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXKC19N60C5

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXKC19N60C5

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 600V 19A ISOPLUS220

Seri : CoolMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 125 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1.1mA

Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 100V

Karakteristik FET : Super Junction

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : ISOPLUS220™

Pake / Ka : ISOPLUS220™

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXK , IXKC1

dokiman pou IXKC19N60C5

Fich : IXKC19N60C5.pdf

pwodwi ki gen rapò pou IXKC19N60C5 IXYS

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