HIP6601BECBZA - IC DRVR MOSFET SYNC BUCK 8EPSOIC

Fabricant Nimewo Pati

HIP6601BECBZA

Entèn Nimewo Pati

AX-HIP6601BECBZA

Fabricant

Renesas Electronics America Inc.

Kout Deskripsyon

IC DRVR MOSFET SYNC BUCK 8EPSOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

38584 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HIP6601BECBZA nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HIP6601BECBZA

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HIP6601BECBZA

Fabricant : Renesas Electronics America Inc.

Deskripsyon : IC DRVR MOSFET SYNC BUCK 8EPSOIC

Seri : -

Estati Pati : Obsolete

Kondwi konte genyen : Half-Bridge

Kalite Chèn : Synchronous

Kantite Chofè yo : 2

Kalite Gate : N-Channel MOSFET

Voltage - Pwovizyon pou : 10.8V ~ 13.2V

Vòltaj lojik - VIL, VIH : -

Kouran - Peak Sòti (Sous, Lavabo) : -

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : 15V

Rise / Fall Time (Tip) : 20ns, 20ns

Operating Tanperati : 0°C ~ 125°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Pake Aparèy Founisè : 8-SOIC-EP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HIP6 , HIP660

dokiman pou HIP6601BECBZA

Fich : HIP6601BECBZA.pdf

pwodwi ki gen rapò pou HIP6601BECBZA Renesas Electronics America Inc.

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