SQD10N30-330H_GE3 - MOSFET N-CH 300V 10A TO252AA

Fabricant Nimewo Pati

SQD10N30-330H_GE3

Entèn Nimewo Pati

AX-SQD10N30-330H_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 300V 10A TO252AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

632580 Pieces

referans pri

~~USD 0.44352~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQD10N30-330H_GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SQD10N30-330H_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQD10N30-330H_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 300V 10A TO252AA

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 300V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 330 mOhm @ 14A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 47nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2190pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 107W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252AA

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQD10 , SQD10N30

dokiman pou SQD10N30-330H_GE3

Fich : SQD10N30-330H_GE3.pdf

pwodwi ki gen rapò pou SQD10N30-330H_GE3 Vishay Siliconix

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