SQ4532AEY-T1_GE3 - MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

Fabricant Nimewo Pati

SQ4532AEY-T1_GE3

Entèn Nimewo Pati

AX-SQ4532AEY-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1230705 Pieces

referans pri

~~USD 0.22797~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQ4532AEY-T1_GE3 nan stock pou vann.

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Espesifikasyon pou SQ4532AEY-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQ4532AEY-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N/P-CH 30V 7.3/5.3A 8SOIC

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Tc), 5.3A (Tc)

RD sou (Max) @ Id, Vgs : 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.8nC @ 10V, 10.2nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 535pF @ 15V, 528pF @ 15V

Pouvwa - Max : 3.3W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQ453 , SQ4532AE

dokiman pou SQ4532AEY-T1_GE3

Fich : SQ4532AEY-T1_GE3.pdf

pwodwi ki gen rapò pou SQ4532AEY-T1_GE3 Vishay Siliconix

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