IPC045N10L3X1SA1 - MOSFET N-CH 100V 1A SAWN ON FOIL

Fabricant Nimewo Pati

IPC045N10L3X1SA1

Entèn Nimewo Pati

AX-IPC045N10L3X1SA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 1A SAWN ON FOIL

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1188205 Pieces

referans pri

~~USD 0.236124~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPC045N10L3X1SA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPC045N10L3X1SA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPC045N10L3X1SA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 1A SAWN ON FOIL

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V

Vgs (th) (Max) @ Id : 2.1V @ 33µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Sawn on foil

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPC04 , IPC045N1

dokiman pou IPC045N10L3X1SA1

Fich : IPC045N10L3X1SA1.pdf

pwodwi ki gen rapò pou IPC045N10L3X1SA1 Infineon Technologies

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