BYVB32-200HE3/81 - DIODE ARRAY GP 200V 18A TO263AB

Fabricant Nimewo Pati

BYVB32-200HE3/81

Entèn Nimewo Pati

AX-BYVB32-200HE3/81

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE ARRAY GP 200V 18A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

414320 Pieces

referans pri

~~USD 0.67716~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BYVB32-200HE3/81 nan stock pou vann.

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Espesifikasyon pou BYVB32-200HE3/81

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYVB32-200HE3/81

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE ARRAY GP 200V 18A TO263AB

Seri : -

Estati Pati : Active

Konfigirasyon dyòd : 1 Pair Common Cathode

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 200V

Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 18A

Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 20A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 25ns

Kouran - Fèy Reverse @ Vr : 10µA @ 200V

Operating Tanperati - Junction : -65°C ~ 150°C

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYVB3 , BYVB32-2

dokiman pou BYVB32-200HE3/81

Fich : BYVB32-200HE3/81.pdf

pwodwi ki gen rapò pou BYVB32-200HE3/81 Vishay Semiconductor Diodes Division

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