TJ80S04M3L(T6L1,NQ - MOSFET P-CH 40V 80A DPAK-3

Fabricant Nimewo Pati

TJ80S04M3L(T6L1,NQ

Entèn Nimewo Pati

AX-TJ80S04M3L(T6L1,NQ

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET P-CH 40V 80A DPAK-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

513845 Pieces

referans pri

~~USD 0.546~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou TJ80S04M3L(T6L1,NQ

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TJ80S04M3L(T6L1,NQ

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET P-CH 40V 80A DPAK-3

Seri : U-MOSVI

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 5.2 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 158nC @ 10V

Vgs (Max) : +10V, -20V

Antre kapasite (Ciss) (Max) @ Vds : 7770pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 100W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK+

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TJ80S0 , TJ80S04M3

dokiman pou TJ80S04M3L(T6L1,NQ

Fich : TJ80S04M3L(T6L1,NQ.pdf

pwodwi ki gen rapò pou TJ80S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

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