BSZ0910NDXTMA1 - DIFFERENTIATED MOSFETS

Fabricant Nimewo Pati

BSZ0910NDXTMA1

Entèn Nimewo Pati

AX-BSZ0910NDXTMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIFFERENTIATED MOSFETS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

859425 Pieces

referans pri

~~USD 0.326454~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSZ0910NDXTMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSZ0910NDXTMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSZ0910NDXTMA1

Fabricant : Infineon Technologies

Deskripsyon : DIFFERENTIATED MOSFETS

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate, 4.5V Drive

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Ta), 25A (Tc)

RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 15V

Pouvwa - Max : 1.9W (Ta), 31W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerVDFN

Pake Aparèy Founisè : PG-WISON-8

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSZ0 , BSZ0910

dokiman pou BSZ0910NDXTMA1

Fich : BSZ0910NDXTMA1.pdf

pwodwi ki gen rapò pou BSZ0910NDXTMA1 Infineon Technologies

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