DMN10H120SFG-7 - MOSFET N-CH 100V 3.8A POWERDI

Fabricant Nimewo Pati

DMN10H120SFG-7

Entèn Nimewo Pati

AX-DMN10H120SFG-7

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET N-CH 100V 3.8A POWERDI

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1603090 Pieces

referans pri

~~USD 0.175014~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMN10H120SFG-7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMN10H120SFG-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMN10H120SFG-7

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET N-CH 100V 3.8A POWERDI

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 110 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10.6nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 549pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PowerDI3333-8

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMN1 , DMN10H1

dokiman pou DMN10H120SFG-7

Fich : DMN10H120SFG-7.pdf

pwodwi ki gen rapò pou DMN10H120SFG-7 Diodes Incorporated

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